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MOSFET
  • NCE80H12D TO-263-2L N沟道MOS场效应管新洁能
  • NCE80H12D TO-263-2L N沟道MOS场效应管新洁能
NCE80H12D TO-263-2L N沟道MOS场效应管新洁能
The NCE80H12D uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. Itcan be used in a wide variety of applications.

通盛 产品介绍

Product index

The NCE80H12D uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. Itcan be used in a wide variety of applications.

通盛 订购信息

ordering information
器件类目

产品型号

封装

环境温度

是否在产

应 用 丝 印
N沟道 NCE80H12D

TO-263-2L

-55 to 175℃

硬开关电路和高频电路、不间断电源

NCE80H12D

通盛测试电路

Test circuit 

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通盛 产品特性

Product characteristics
High density cell design for ultra low Rdson
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability

通盛 应用范围

Scope of application

公司优势

Company advantage
正

原装现货,技术选型

快

云仓现货,快速配送

全

品类齐全,性能优良

省

工厂直销,样品申请

技术团队

Technical team

技术团队

通盛仓库

Tongsheng warehouse

通盛仓库

通盛 荣誉资质

Honorary qualification

荣誉资质