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MOSFET
  • AP8G06S SOP-8L N+P沟道场效应管MOSFET永源微
  • AP8G06S SOP-8L N+P沟道场效应管MOSFET永源微
AP8G06S SOP-8L N+P沟道场效应管MOSFET永源微
The AP8G06S uses advanced trench technologyto provide excellent RDS(ON), low gate charge andoperation with gate voltages as low as 4.5V. Thisdevice is suitable for use as aBattery protection or in other Switching application.

通盛 产品介绍

Product index

The AP8G06S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.

通盛 订购信息

ordering information
器件类目

产品型号

封装

环境温度

是否在产

应 用 丝 印
N+P AP8G06S

SOP-8L

-55 to 150 ℃

无线充电、提升驱动程序、无电刷电动机

AP8G06S

通盛示意图

Sketch Map  

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通盛 产品特性

Product characteristics
VDS = 60V ID =8.5A
RDS(ON) < 52mΩ @ VGS=10V             (Type:38mΩ) 
VDS = -60V ID =-7.7A
RDS(ON) < 100mΩ @ VGS=-10V         (Type:80mΩ)

通盛 应用范围

Scope of application

公司优势

Company advantage
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原装现货,技术选型

快

云仓现货,快速配送

全

品类齐全,性能优良

省

工厂直销,样品申请

技术团队

Technical team

技术团队

通盛仓库

Tongsheng warehouse

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通盛 荣誉资质

Honorary qualification

荣誉资质