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MOSFET
  • AP40G03NF PDFN5*6-8L N+P沟道场效应管MOSFET永源微
  • AP40G03NF PDFN5*6-8L N+P沟道场效应管MOSFET永源微
AP40G03NF PDFN5*6-8L N+P沟道场效应管MOSFET永源微
The AP40G03NF uses advanced trench technologyto provide excellent RDS(ON), low gate charge andoperation with gate voltages as low as 4.5V. Thisdevice is suitable for use as a Battery protectionor in other Switching application.

通盛 产品介绍

Product index

The AP40G03NF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.

通盛 订购信息

ordering information
器件类目

产品型号

封装

环境温度

是否在产

应 用 丝 印
N+P AP40G03NF

PDFN5*6-8L

-55 to 150 ℃

无线充电、提升驱动程序、无电刷电动机

AP40G03NF

通盛示意图

Sketch Map  

20211025172331690301/resource/images/98aa013f62674404842ce3144b41a64c_24.jpg

通盛 产品特性

Product characteristics
VDS = 30V ID =42A
RDS(ON) < 10mΩ @ VGS=10V             (Type:6.5mΩ) 
VDS = -30V ID =-38A
RDS(ON) < 13mΩ @ VGS=-10V           (Type:9.0mΩ)

通盛 应用范围

Scope of application

公司优势

Company advantage
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原装现货,技术选型

快

云仓现货,快速配送

全

品类齐全,性能优良

省

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技术团队

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通盛 荣誉资质

Honorary qualification

荣誉资质