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MOSFET
  • AP25G04GD TO-252-4L N+P沟道场效应管MOSFET永源微
  • AP25G04GD TO-252-4L N+P沟道场效应管MOSFET永源微
AP25G04GD TO-252-4L N+P沟道场效应管MOSFET永源微
The AP25G04GD uses advanced trench technologyto provide excellent RDS(ON), low gate charge andoperation with gate voltages as low as 4.5V. Thisdevice is suitable for use as a Battery protectionor in other Switching application.

通盛 产品介绍

Product index

The AP25G04GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.

通盛 订购信息

ordering information
器件类目

产品型号

封装

环境温度

是否在产

应 用 丝 印
N+P AP25G04GD

TO-252-4L

-55 to 150 ℃

提升驱动程序、无电刷电动机

AP25G04GD

通盛示意图

Sketch Map  

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通盛 产品特性

Product characteristics
VDS = 40V ID =28 A
RDS(ON) < 24mΩ @ VGS=10V              (Type:18mΩ) 
VDS = -40V ID =25A
RDS(ON) < 40mΩ @ VGS=10V             (Type:32mΩ)

通盛 应用范围

Scope of application

公司优势

Company advantage
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原装现货,技术选型

快

云仓现货,快速配送

全

品类齐全,性能优良

省

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技术团队

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通盛 荣誉资质

Honorary qualification

荣誉资质