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MOSFET
  • AP20G03GD TO-252-4L N+P沟道场效应管MOSFET永源微
  • AP20G03GD TO-252-4L N+P沟道场效应管MOSFET永源微
AP20G03GD TO-252-4L N+P沟道场效应管MOSFET永源微
The AP20G03GD uses advanced trench technologyto provide excellent RDS(ON), low gate charge andoperation with gate voltages as low as 4.5V. Thisdevice is suitable for use as aBattery protection or in other Switching application

通盛 产品介绍

Product index

The AP20G03GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application

通盛 订购信息

ordering information
器件类目

产品型号

封装

环境温度

是否在产

应 用 丝 印
N+P AP20G03GD

TO-252-4L

-55 to 150 ℃

电池保护、负荷开关、不间断电源

AP20G03GD

通盛示意图

Sketch Map  

20211025172331690301/resource/images/cc87e66e446a4e79917dd215d4bed54c_16.jpg

通盛 产品特性

Product characteristics
VDS = 30V ID =30 A
RDS(ON) < 22mΩ @ VGS=10V
VDS = -30V ID =-24 A
RDS(ON) < 35mΩ @ VGS=10V

通盛 应用范围

Scope of application

公司优势

Company advantage
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原装现货,技术选型

快

云仓现货,快速配送

全

品类齐全,性能优良

省

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Technical team

技术团队

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通盛 荣誉资质

Honorary qualification

荣誉资质