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MOSFET
  • AP13P06D TO-252-3L P沟道场效应管MOSFET永源微
  • AP13P06D TO-252-3L P沟道场效应管MOSFET永源微
AP13P06D TO-252-3L P沟道场效应管MOSFET永源微
The AP13P06D uses advanced trench technologyto provide excellent RDS(ON), low gate charge andoperation with gate voltages as low as 4.5V. Thisdevice is suitable for use as a Battery protectionor in other Switching application.

通盛 产品介绍

Product index

The AP13P06D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.

通盛 订购信息

ordering information
器件类目

产品型号

封装

环境温度

是否在产

应 用 丝 印
P沟道 AP13P06D

TO-252-3L

-55 to 150 ℃

无电刷电动机、负荷开关、不间断电源

AP13P06D

通盛示意图

Sketch Map  

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通盛 产品特性

Product characteristics
VDS = -60V ID =-13.5A
RDS(ON) < 90mΩ @ VGS=10V (Type:80mΩ)

通盛 应用范围

Scope of application

公司优势

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原装现货,技术选型

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全

品类齐全,性能优良

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通盛 荣誉资质

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