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MOSFET
  • AP120N10NF PDFN5*6-8L N沟道场效应管MOSFET永源微
  • AP120N10NF PDFN5*6-8L N沟道场效应管MOSFET永源微
AP120N10NF PDFN5*6-8L N沟道场效应管MOSFET永源微
The AP120N10NF uses advanced APM-SGTⅠⅠ technologyto provide excellent RDS(ON), low gate charge andoperation with gate voltages as low as 4.5V. Thisdevice is suitable for use as a Battery protection orin other Switching application.

通盛 产品介绍

Product index

The AP120N10NF uses advanced APM-SGTⅠⅠ technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.

通盛 订购信息

ordering information
器件类目

产品型号

封装

环境温度

是否在产

应 用 丝 印
N沟道 AP120N10NF

PDFN5*6-8L

-55 to 150 ℃

隔离直流电、电动机控制器、同步整流

AP120N10NF

通盛示意图

Sketch Map  

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通盛 产品特性

Product characteristics
VDS = 100V ID =120A
RDS(ON) < 4.5mΩ @ VGS=10V (Type:3.8mΩ)

通盛 应用范围

Scope of application

公司优势

Company advantage
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原装现货,技术选型

快

云仓现货,快速配送

全

品类齐全,性能优良

省

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技术团队

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技术团队

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通盛 荣誉资质

Honorary qualification

荣誉资质